THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR AND DISPLAY SUBSTRATE

WIPO Patent Application WO/2018/218986

A1

A thin film transistor manufacturing method, a thin film transistor and a display substrate. The manufacturing method comprises: sequentially forming, on a base substrate (31), a polycrystalline silicon pattern layer (34) and a protection pattern layer (35); using a first etching gas to etch the protection pattern layer (35) to obtain a protection pattern (35*); using the protection pattern (35*) as a mask plate, and using a second etching gas to simultaneously etch the protection pattern (35*) and the polycrystalline silicon pattern layer (34) to obtain a residual protection pattern (35') and a polycrystalline silicon pattern (34*) respectively, wherein the rate at which the protection pattern (35*) is etched by the second etching gas is not less than the rate at which the polycrystalline silicon pattern layer (34) is etched by the second etching gas; forming an amorphous silicon pattern (36), the amorphous silicon pattern (36) contacting an etched side of the polycrystalline silicon pattern (34*), a part of the residual protection pattern (35') being exposed, and the polycrystalline silicon pattern (34*) and the amorphous silicon pattern (36) together forming an active layer.

QIAN HAIJIAO (CN)
CAO BINBIN (CN)
YANG CHENGSHAO (CN)
HUANG YINHU (CN)

PCT/CN2018/074924

December 06, 2018

February 01, 2018

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BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)

H01L29/786; H01L21/336

CN107221503A	2017-09-29
CN1828850A	2006-09-06
CN1532945A	2004-09-29
CN1540717A	2004-10-27
CN105789327A	2016-07-20
CN105845737A	2016-08-10
US20060094168A1	2006-05-04

DRAGON INTELLECTUAL PROPERTY LAW FIRM (CN)

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