Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/050266
Kind Code:
A1
Abstract:
A thin film transistor and a manufacturing method therefor are provided. The manufacturing method for a thin film transistor comprises the steps of: preparing a substrate; forming a first semiconductor layer on the substrate; forming a second semiconductor layer thinner than the first semiconductor layer on the first semiconductor layer; patterning the first semiconductor layer and the second semiconductor layer; forming a gate insulating film on the second semiconductor layer; and forming a gate electrode on the gate insulating film, wherein the first semiconductor layer is formed by DC sputtering under an oxygen atmosphere, and the second semiconductor layer is formed at a lower rate than the first semiconductor layer under an oxygen-deficient condition.
Inventors:
KIM BO SUNG (KR)
HONG MUN PYO (KR)
KIM SANG IL (KR)
JUNG HYEN JAE (KR)
HONG MUN PYO (KR)
KIM SANG IL (KR)
JUNG HYEN JAE (KR)
Application Number:
PCT/KR2018/010352
Publication Date:
March 14, 2019
Filing Date:
September 05, 2018
Export Citation:
Assignee:
UNIV KOREA RES & BUSINESS FOUNDATION SEJONG CAMPUS (KR)
International Classes:
H01L29/786; H01L21/02; H01L27/32
Foreign References:
| KR20170080047A | 2017-07-10 | |||
| KR20140025224A | 2014-03-04 | |||
| KR20170079082A | 2017-07-10 | |||
| KR20130111874A | 2013-10-11 | |||
| KR101279477B1 | 2013-06-28 |
Attorney, Agent or Firm:
PARK, Sang Youl (KR)
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