THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE

WIPO Patent Application WO/2019/109310

A1

Provided are a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. A thin film transistor comprises a gate electrode (41), an active layer (20) electrically insulated from the gate electrode, a source electrode, a drain electrode, and a gate insulation layer (31) provided between the gate electrode and the active layer (20). The source electrode and the drain electrode are respectively in contact with the active layer, and the gate insulation layer and the gate electrode are formed by means of the following steps: forming an active layer on the upper surface of a substrate (10); forming an insulation layer (30) and a metal layer (40) in turn on the upper surfaces of the active layer and the substrate; performing a first patterning process on the metal layer by means of a first block pattern (511) to form a gate electrode; and performing, in the presence of the first block pattern, a second patterning process on the insulation layer by means of a second block pattern (522) to form a gate insulation layer.

JP5912394	Semiconductor device
JPH0951094	SEMICONDUCTOR ELEMENT, MANUFACTURE THEREOF AND MANUFACTURE OF CONTACT HOLE
JPH07109892	PROBLEM TO BE SOLVED: To manufacture an insulated gate type field effect semiconductor device.

ZHAO XIAOHUI (CN)
LI MINGLIANG (CN)
WANG ZHENGWEN (CN)

PCT/CN2017/115043

June 13, 2019

December 07, 2017

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SHENZHEN ROYOLE TECHNOLOGIES CO LTD (CN)

H01L21/336; H01L29/786

CN103137495A	2013-06-05
CN102763202A	2012-10-31
CN105977306A	2016-09-28

TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)

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