Title:
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, GATE DRIVE CIRCUIT AND FLAT PANEL DISPLAY
Document Type and Number:
WIPO Patent Application WO/2019/148327
Kind Code:
A1
Abstract:
A thin-film transistor and a manufacturing method therefor, a gate drive circuit and a flat panel display. The thin-film transistor comprises: a substrate (11); one of a source layer (12) and a drain layer (14), which is provided on the substrate (11); an insulating separation layer (13) provided on one of the source layer (12) and the drain layer (14); the other of the source layer (12) and the drain layer (14), which is provided on the insulating separation layer (13); an active layer (15), which covers one of the source layer (12) and the drain layer (14), the insulating separation layer (13) and the other of the source layer (12) and the drain layer (14), and conductively connects one of the source layer (12) and the drain layer (14) to the other of the source layer (12) and the drain layer (14); a gate insulating layer (16) provided on the active layer (15); and a gate layer (17) provided on the gate insulating layer (16). The beneficial effect is that a source layer and a drain layer are vertically arranged, so that a channel length can be effectively reduced, thereby reducing the size of a thin-film transistor.
Inventors:
CHEN DAN (CN)
KIM JI HA (CN)
HUANG BIN (CN)
KIM JI HA (CN)
HUANG BIN (CN)
Application Number:
PCT/CN2018/074589
Publication Date:
August 08, 2019
Filing Date:
January 30, 2018
Export Citation:
Assignee:
SECSHENZHEN ROYOLE TECH CO LTD (CN)
International Classes:
H01L29/786; H01L21/336
Foreign References:
| CN107482064A | 2017-12-15 | |||
| CN107591480A | 2018-01-16 | |||
| US20120097947A1 | 2012-04-26 | |||
| CN105960711A | 2016-09-21 |
Attorney, Agent or Firm:
SHENZHEN REFINED INTELLECTUAL PROPERTY OFFICE (GENERAL PARTNERSHIP) (CN)
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