Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/187237
Kind Code:
A1
Abstract:
A thin film transistor and a manufacturing method therefor, and a display device. The thin film transistor comprises: a substrate (10), and a gate electrode (1), a gate insulating layer (3), an active layer (4) and a source/drain layer which are sequentially arranged on the substrate (10); the source/drain layer being correspondingly located on a first source contact region (5) and a first drain contact region (6) of the active layer (4), wherein a flat layer (2) is further provided between the gate insulating layer (3) and the substrate (10), the flat layer (2) and the gate electrode (1) are located in the same layer and are in close contact with each other, and the upper surface of the flat layer (2) is flush with the upper surface of the gate electrode (1).
Inventors:
REN YANWEI (CN)
SHI TIANLEI (CN)
TANG WULIJIBAIER (CN)
XU JINGYI (CN)
YU YANAN (CN)
SUN CHAOCHAO (CN)
LIU MIN (CN)
SHI TIANLEI (CN)
TANG WULIJIBAIER (CN)
XU JINGYI (CN)
YU YANAN (CN)
SUN CHAOCHAO (CN)
LIU MIN (CN)
Application Number:
PCT/CN2020/079924
Publication Date:
September 24, 2020
Filing Date:
March 18, 2020
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L29/786; H01L21/336; H01L29/423
Foreign References:
| CN101506985A | 2009-08-12 | |||
| CN101506985A | 2009-08-12 | |||
| JPH0823102A | 1996-01-23 | |||
| CN101644865A | 2010-02-10 | |||
| CN107863352A | 2018-03-30 | |||
| CN1489790A | 2004-04-14 | |||
| US20170309653A1 | 2017-10-26 | |||
| CN109873037A | 2019-06-11 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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