Title:
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/091297
Kind Code:
A1
Abstract:
The present invention relates to a thin-film transistor and to a method for manufacturing same. The thin-film transistor includes: a gate electrode; source and drain electrodes vertically spaced apart from the gate electrode, wherein the source and drain electrodes are horizontally spaced apart from each other; a gate insulation layer disposed between the gate electrode and the source and drain electrodes; and an active layer disposed between the gate insulation layer and the source and drain electrodes. The active layer consists of at least two or more doped ZnO thin films.
Inventors:
KIM JAE HO (KR)
OH DONG GUN (KR)
CHOI DO HYUN (KR)
MOON JIN WOOK (KR)
OH DONG GUN (KR)
CHOI DO HYUN (KR)
MOON JIN WOOK (KR)
Application Number:
PCT/KR2011/008975
Publication Date:
July 05, 2012
Filing Date:
November 23, 2011
Export Citation:
Assignee:
JUSUNG ENG CO LTD (KR)
KIM JAE HO (KR)
OH DONG GUN (KR)
CHOI DO HYUN (KR)
MOON JIN WOOK (KR)
KIM JAE HO (KR)
OH DONG GUN (KR)
CHOI DO HYUN (KR)
MOON JIN WOOK (KR)
International Classes:
H01L29/786; G02F1/136; H01L21/336
Foreign References:
| JP2009218562A | 2009-09-24 | |||
| KR100786498B1 | 2007-12-17 | |||
| KR20090105561A | 2009-10-07 | |||
| KR100858617B1 | 2008-09-17 |
Attorney, Agent or Firm:
NAM, SEUNG-HEE (KR)
남승희 (KR)
남승희 (KR)
Download PDF:
Claims: