Title:
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/186354
Kind Code:
A1
Abstract:
This thin film transistor is provided with a gate electrode, oxide semiconductor layer, gate insulating layer, source electrode, and drain electrode. The oxide semiconductor layer includes: a first semiconductor layer that includes a channel region; and a second semiconductor layer, which is disposed on the first semiconductor layer, and which includes a source contact region in contact with the source electrode, and a drain contact region in contact with the drain electrode. The second semiconductor layer contains a material that is same as that of the first semiconductor layer, and has a film density lower than that of the first semiconductor layer.
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Inventors:
HONDA YOSUKE
Application Number:
PCT/JP2015/002793
Publication Date:
December 10, 2015
Filing Date:
June 02, 2015
Export Citation:
Assignee:
JOLED INC (JP)
International Classes:
H01L29/786; H01L21/336
Foreign References:
| JP2009099944A | 2009-05-07 | |||
| JP2010258434A | 2010-11-11 | |||
| JP2012178493A | 2012-09-13 | |||
| JP2012015436A | 2012-01-19 | |||
| JP2014013891A | 2014-01-23 | |||
| US20080299702A1 | 2008-12-04 |
Attorney, Agent or Firm:
NAKAJIMA & ASSOCIATES IP FIRM (JP)
Patent business corporation The Nakajima intellectual property synthesis office (JP)
Patent business corporation The Nakajima intellectual property synthesis office (JP)
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