Title:
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/090861
Kind Code:
A1
Abstract:
A thin film transistor, a method for manufacturing the thin film transistor, and a liquid crystal display device. The thin film transistor (1) comprises a substrate (10), a gate (11), a gate insulating layer (12), an active layer (13), a source (14), and a drain (15). The substrate comprises a first surface (101) and a second surface (102) opposite to each other. The gate comprises a first end surface (111) and a second end surface (112) opposite to each other. The gate is disposed on the first surface with the first end surface and the second end surface both intersecting the first surface. The gate insulating layer covers the gate. The active layer is disposed on the surface of the gate insulating layer distant from the gate, and comprises a first side surface (131) and a second side surface (132) opposite to each other. The source is disposed adjacent to the first side surface, and is electrically connected to the active layer by means of the first side surface. There is a first gap between the source and the first end surface, or the source and the first end surface are coplanar. The drain is disposed adjacent to the second side surface, and is electrically connected to the active layer by means of the second side surface. There is a second gap between the drain and the second end surface, or the drain and the second end surface are coplanar. The thin film transistor of such a structure is benefit to reduce parasitic capacitance.
Inventors:
WU WEI (CN)
Application Number:
PCT/CN2017/112980
Publication Date:
May 16, 2019
Filing Date:
November 25, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/786; G02F1/1362; G02F1/1368; H01L21/336
Foreign References:
| CN104134671A | 2014-11-05 | |||
| CN1912725A | 2007-02-14 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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