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Title:
THIN FILM TRANSISTOR, PREPARATION METHOD FOR THIN FILM TRANSISTOR AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/119958
Kind Code:
A1
Abstract:
A thin film transistor (100), a preparation method for the thin film transistor (100) and an array substrate, the thin film transistor (100) comprising a gate electrode (102), an active layer (104), a source electrode (106), a drain electrode (108), a first protective layer (110) and a second protective layer (112). The first protective layer (110) is positioned between the source electrode (106) and the active layer (104) and is connected to the source electrode (106) and the active layer (104); the second protective layer (112) is positioned between the drain electrode (108) and the active layer (104) and is connected to the drain electrode (108) and the active layer (104); both the first protective layer (110) and the second protective layer (112) comprise at least two stacked sub-layers (114), and the at least two sub-layers (114) have different doping concentrations. In the thin film transistor (100), the protective layers (110, 112) connected to the active layer (104) and the source electrode (106)/drain electrode (108) comprise at least two sub-layers (114) having different doping concentrations, thereby optimizing contact resistance between the active layer (104) and the source electrode (106)/drain electrode (108) when protective layers (110, 112) are provided so as to improve the electrical characteristics of the thin film transistor (100).

Inventors:
CHEN XIAOMING (CN)
ZHAO XIAOHUI (CN)
CAO HUIMIN (CN)
Application Number:
PCT/CN2016/113295
Publication Date:
July 05, 2018
Filing Date:
December 29, 2016
Export Citation:
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Assignee:
SHENZHEN ROYOLE TECHNOLOGIES CO LTD (CN)
International Classes:
H01L29/786; H01L29/45
Foreign References:
CN104716199A2015-06-17
CN105720093A2016-06-29
CN104576750A2015-04-29
CN105161503A2015-12-16
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
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