Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/205770
Kind Code:
A1
Abstract:
A thin film transistor and a preparation method therefor, a display substrate and a display device. The thin film transistor comprises, on a base substrate (01), a control gate (02), a floating gate (03), an injection layer (04), an active layer (05), a gate electrode (06), and a source electrode (07) and a drain electrode (08) oppositely provided and electrically connected to the active layer (05). The injection layer (04) is located between the floating gate (03) and the active layer (05); the active layer (05) is located between the control gate (02) and the gate electrode (06); and the floating gate (03) is located between the control gate (02) and the active layer (05). The arrangement of the floating gate and the injection layer enables positive drift of the threshold voltage of the thin film transistor, thereby solving the problem caused by the negative drift of the threshold voltage of the thin film transistor; clearing of the charge stored on the floating gate can be achieved by providing the control gate, thereby ensuring the accuracy of writing data each time.
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Inventors:
SONG ZHEN (CN)
WANG GUOYING (CN)
WANG GUOYING (CN)
Application Number:
PCT/CN2018/081386
Publication Date:
November 15, 2018
Filing Date:
March 30, 2018
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/788; H01L29/786
Foreign References:
| CN107068772A | 2017-08-18 | |||
| CN1130808A | 1996-09-11 | |||
| US5452250A | 1995-09-19 | |||
| CN103594059A | 2014-02-19 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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