Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/104484
Kind Code:
A1
Abstract:
Provided are a thin film transistor and a preparation method therefor, a display substrate and a display apparatus. The method for preparing a thin film transistor comprises: providing a gate electrode (400), a source electrode (600), a drain electrode (700) and an active layer (100), wherein the source electrode (600) and the drain electrode (700) are respectively in contact with the active layer (100); and the gate electrode (400) is electrically insulated from the source electrode (600), the drain electrode (700) and the active layer (100). The source electrode (600) and the drain electrode (700) of the thin film transistor are formed by means of the following steps: forming a metal layer (200) on an upper surface of an active layer (100); forming a groove (300) with an upper opening on the metal layer (200), wherein a residual metal layer (211) is retained between the bottom of the groove (300) and the active layer (100); and carrying out oxidation treatment on the residual metal layer (211) to form a metal oxide layer (212). The method for preparing a thin film transistor is simple and convenient in operation, and is easy to implement and the industrial production is easy, has high productivity, and can protect the active layer (100) from being etched when the metal layer (200) is etched to form the source electrode (600) and the drain electrode (700), so that the thin film transistor prepared by means of the method has excellent electrical properties and good stability.

Inventors:
YE JIANGBO (CN)
HE JIAWEI (CN)
Application Number:
PCT/CN2017/113394
Publication Date:
June 06, 2019
Filing Date:
November 28, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHENZHEN ROYOLE TECHNOLOGIES CO LTD (CN)
International Classes:
H01L29/786
Foreign References:
CN102651322A2012-08-29
CN101908537A2010-12-08
CN102646699A2012-08-22
US20140239290A12014-08-28
US20150206977A12015-07-23
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
Download PDF: