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Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND ARRAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/134475
Kind Code:
A1
Abstract:
A thin film transistor and a preparation method thereof, and an array substrate and a display device. The thin film transistor comprises: a light shielding layer (12); a first insulating layer (13); and an active layer (14), the first insulating layer (13) is disposed between the light shielding layer (12) and the active layer (14); a second insulating layer (15) and a gate (16), the second insulating layer (15) being disposed between the gate (16) and the active layer (14), and the active layer (14) comprises a source region and a drain region; an interlayer insulating layer (17); a source (18) and a drain (19) respectively connected to the source region and the drain region of the active layer (14); and at least one conductive connector (201/203) penetrating through the first insulating layer (13) in order to connect at least a portion of the light shielding layer (12) to at least one of the source region and the drain region, or to at least one of the source (18) and the drain (19).

Inventors:
BAN, Shengguang (NO. 9 DIZE RD, BDA, Beijing 6, 100176, CN)
CAO, Zhanfeng (NO. 9 DIZE RD, BDA, Beijing 6, 100176, CN)
Application Number:
CN2018/119099
Publication Date:
July 11, 2019
Filing Date:
December 04, 2018
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO., LTD. (NO.10 JIUXIANQIAO RD, CHAOYANG DISTRICT, Beijing 5, 100015, CN)
International Classes:
H01L21/336; H01L29/786
Foreign References:
CN105470267A2016-04-06
CN107068770A2017-08-18
KR20170135550A2017-12-08
CN108231595A2018-06-29
JPH1031235A1998-02-03
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (8th Floor, Vantone New World Plaza 2 Fuchengmenwai Street, Xicheng District, Beijing 7, 100037, CN)
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