THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE

WIPO Patent Application WO/2022/247271

A1

The present application discloses a thin film transistor, a preparation method therefor, an array substrate, and a display device. The thin film transistor comprises a gate insulating layer (3), the material of the gate insulating layer (3) containing silicon, and the surface of the gate insulating layer (3) containing Si-N and/or Si-O chemical bonds. The preparation method for the thin film transistor comprises the steps of: forming a silicon-containing gate insulating film on the surface of a substrate (1) on which a gate is formed; and performing thermal modification on the gate insulating film to generate Si-N and/or Si-O chemical bonds on the surface of the gate insulating film. The thin film transistor array substrate and the display device both contain the thin film transistor. The thin film transistor contains Si-N and/or Si-O chemical bonds on the surface of the gate insulating layer (3), and a thin film transistor device has stable properties, such as threshold voltage. The process of the preparation method for the thin film transistor is easy to control, and the properties of the prepared thin film transistor are stable, improving both the properties of the thin film transistor array substrate and the display quality of the display device.

XIA YUMING (CN)
CHO EN-TSUNG (CN)
ZHENG HAOXUAN (CN)

PCT/CN2021/142744

December 01, 2022

December 29, 2021

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HKC CORP LTD (CN)

H01L21/336; H01L21/28; H01L27/12; H01L29/786

CN113314424A	2021-08-27
CN103109360A	2013-05-15
CN103887161A	2014-06-25
KR20080046442A	2008-05-27

SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)

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