Title:
THIN-FILM TRANSISTOR PRODUCING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/004624
Kind Code:
A1
Abstract:
Provided is a thin-film transistor producing method by which a thin-film transistor provided with a LDD region can be produced without increasing the number of photomasks used.
An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used as not only a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching but also a mask used when ions are implanted to form a source/drain region (39). Thus, phosphorus which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain region (39) is not implanted in the LDD region (38) and, accordingly, it is not necessary to newly form a resist pattern to be used as a mask when ions are implanted.
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Inventors:
KUNIYOSHI TOKUAKI
KITAKADO HIDEHITO
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
KATOH SUMIO
KITAKADO HIDEHITO
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
KATOH SUMIO
Application Number:
PCT/JP2010/052335
Publication Date:
January 13, 2011
Filing Date:
February 17, 2010
Export Citation:
Assignee:
SHARP KK (JP)
KUNIYOSHI TOKUAKI
KITAKADO HIDEHITO
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
KATOH SUMIO
KUNIYOSHI TOKUAKI
KITAKADO HIDEHITO
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
KATOH SUMIO
International Classes:
H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Foreign References:
| JPH0637111A | 1994-02-10 | |||
| JP2000150904A | 2000-05-30 | |||
| JPH0945930A | 1997-02-14 | |||
| JPH10189991A | 1998-07-21 | |||
| JP2009141145A | 2009-06-25 |
Attorney, Agent or Firm:
SHIMADA, AKIHIRO (JP)
Akihiro Shimada (JP)
Akihiro Shimada (JP)
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