Title:
THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/019658
Kind Code:
A1
Abstract:
The present invention provides a thin film transistor structure and a method for manufacturing same, a display panel, and a display device. The thin film transistor structure comprises a base substrate (10), and a first thin film transistor (20) and a second thin film transistor (30) formed on the base substrate (10); a first active layer (21) of the first thin film transistor (20) is doped with hydrogen; a second active layer (33) of the second thin film transistor (30) is made of a metal oxide; a first isolation barrier (50) surrounding the first thin film transistor (20) or/and a second isolation barrier (40) surrounding the second thin film transistor (30) is further provided on the base substrate (10). The first isolation barrier (50) or/and the second isolation barrier (40) isolates the second thin film transistor (30) from the first thin film transistor (20), in order to isolate the hydrogen in the first active layer (21) of the first thin film transistor (20), thereby avoiding adverse impact on the second thin film transistor (30) caused by the hydrogen in the first active layer (21).
Inventors:
HU HEHE (CN)
YANG WEI (CN)
LU XINHONG (CN)
WANG KE (CN)
WEN YU (CN)
YANG WEI (CN)
LU XINHONG (CN)
WANG KE (CN)
WEN YU (CN)
Application Number:
PCT/CN2018/078869
Publication Date:
January 31, 2019
Filing Date:
March 13, 2018
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L27/12; H01L21/77; H01L27/32
Foreign References:
| CN107452756A | 2017-12-08 | |||
| KR20170049666A | 2017-05-11 | |||
| CN1303128A | 2001-07-11 | |||
| CN101322241A | 2008-12-10 | |||
| CN101339924A | 2009-01-07 | |||
| CN104025269A | 2014-09-03 | |||
| US20110024774A1 | 2011-02-03 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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