Title:
THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MEASURING CHANNEL RESISTANCE AND CONTACT RESISTANCE
Document Type and Number:
WIPO Patent Application WO/2020/087581
Kind Code:
A1
Abstract:
A thin film transistor structure and a method for measuring a channel resistance and a contact resistance. The thin film transistor structure comprises a substrate (1), a gate (2) provided on the substrate (1), a gate insulating layer (3) provided on the gate (2), an active layer (4) provided on the gate insulating layer (3), and a source (5), a measuring electrode (6), and a drain (7) successively arranged on the active layer (4) at intervals; and the interval distance between the measuring electrode (6) and the source (5) is different from the interval distance between the measuring electrode (6) and the drain (7). By providing the measuring electrode (6) on the active layer (4), and then by measuring the voltage on the measuring electrode (6) and the current flowing through the drain (7), the channel resistance (R1) and the contact resistance (R2) of the thin film transistor are determined, and thus the measurement of the channel resistance (R1) and the contact resistance (R2) of the thin film transistor can be completed rapidly and accurately by means of one single thin film transistor.
Inventors:
ZHU MAOXIA (CN)
Application Number:
PCT/CN2018/116007
Publication Date:
May 07, 2020
Filing Date:
November 16, 2018
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
G01R31/26
Foreign References:
| JPH01119068A | 1989-05-11 | |||
| CN103575998A | 2014-02-12 | |||
| CN104407224A | 2015-03-11 | |||
| CN105223420A | 2016-01-06 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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