Title:
THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR PRODUCING THIN FILM TRANSISTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/026704
Kind Code:
A1
Abstract:
The present invention provides: a thin film transistor substrate which is able to have an improved yield and enables an electrode to have a lower resistance; a liquid crystal display device which is provided with this thin film transistor substrate; and a method for producing a thin film transistor substrate. The present invention is a thin film transistor substrate which is provided with: a thin film transistor that has a base substrate, a source electrode and a drain electrode; and a protective insulating film that is arranged so as to cover the thin film transistor and is formed from silicon oxide. Each of the source electrode and the drain electrode comprises: a laminate that is obtained by sequentially laminating an aluminum layer and a molybdenum nitride layer; and a titanium nitride/titanium layer that covers the laminate.
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Inventors:
MISAKI KATSUNORI
Application Number:
PCT/JP2018/027789
Publication Date:
February 07, 2019
Filing Date:
July 25, 2018
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; G02F1/1368; H01L21/28; H01L21/336; H01L29/417
Domestic Patent References:
| WO2011155125A1 | 2011-12-15 | |||
| WO2015040982A1 | 2015-03-26 | |||
| WO2014017406A1 | 2014-01-30 | |||
| WO2017085595A1 | 2017-05-26 |
Foreign References:
| JP2011146692A | 2011-07-28 | |||
| JP2013179290A | 2013-09-09 |
Attorney, Agent or Firm:
YASUTOMI & ASSOCIATES (JP)
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