Title:
THIN-FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/189943
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a thin-film transistor substrate configured so as to suppress the intensity and amount of light being incident from an LED or the like onto a semiconductor channel layer. The TFT substrate (100) according to the present invention comprises a light shielding film (50A) provided, continuously and adjacently to a common electrode (5), below a drain electrode (8) in an area overlapping a drain electrode (7) in plan view. The TFT substrate (100) further comprises a light shielding film (50B) provided below a source electrode (8) in an area in which the source electrode (8) and the common electrode (5) overlap in plan view. Additionally, the TFT substrate (100) is equipped with a conductive light shielding film (50C) above a gate electrode (2) at a gate terminal section (30). The light shielding film (50C) is electrically connected to the gate electrode (2) and overlaps the gate electrode (2) in plan view.
Inventors:
YAMARIN HIROYA (JP)
FURUHATA TAKEO (JP)
INOUE KAZUNORI (JP)
FURUHATA TAKEO (JP)
INOUE KAZUNORI (JP)
Application Number:
PCT/JP2017/039893
Publication Date:
October 18, 2018
Filing Date:
November 06, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; G02F1/1368; H01L29/786
Domestic Patent References:
| WO2015087586A1 | 2015-06-18 |
Foreign References:
| JP2016048706A | 2016-04-07 | |||
| JP2010171394A | 2010-08-05 | |||
| JP2015228491A | 2015-12-17 | |||
| JP2012164976A | 2012-08-30 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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