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Title:
THIN FILM TRANSISTOR SUBSTRATE OFA DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO2004081976
Kind Code:
A3
Abstract:
Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate (10) includes a nickel-silicide layer (11b) formed on an insulating layer pattern including silicon (10) and a metal layer (12b) formed on the nickel-silicide layer (11b). Nickel is coated on the insulating layer pattern including silicon (10) and a metal material (12) is coated on the nickel-coated layer (11). After that, a heat treatment is performed at about 200 to about 350 °C to obtain the nickel-silicide layer (11a). Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring (13b), a device having low resistivity and good ohmic contact property can be obtained.

Inventors:
JEONG CHANG-OH (KR)
CHO BEOM-SEOK (KR)
CHOE HEE-HWAN (KR)
Application Number:
PCT/KR2004/000439
Publication Date:
December 16, 2004
Filing Date:
February 28, 2004
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
JEONG CHANG-OH (KR)
CHO BEOM-SEOK (KR)
CHOE HEE-HWAN (KR)
International Classes:
G02F1/136; G02F1/1362; H01L21/77; H01L21/84; H01L27/12; H01L29/45; H01L29/49; H01L29/786; (IPC1-7): H01L29/786; G02F1/1343; G02F1/136; H01L21/283
Foreign References:
GB2339966A2000-02-09
EP0501561B11996-12-18
US6316295B12001-11-13
US6319761B12001-11-20
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