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Title:
THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/125820
Kind Code:
A1
Abstract:
This thin film transistor has a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), a protecting insulating film (70), and a channel layer (40). The channel layer (40) is disposed between the gate insulating film (30) and the protecting insulating film (70) and has a region (44) having a high spreading resistance value and a region (42) having a low spreading resistance value.

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Inventors:
TSURUMA YUKI (JP)
EBATA KAZUAKI (JP)
MATSUZAKI SHIGEO (JP)
YANO KOKI (JP)
Application Number:
PCT/JP2014/000733
Publication Date:
August 21, 2014
Filing Date:
February 13, 2014
Export Citation:
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Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
H01L29/786; C01G15/00; G02F1/1368; H01L21/336
Domestic Patent References:
WO2011151990A12011-12-08
Foreign References:
JP2010040552A2010-02-18
JP2009099944A2009-05-07
JP2012028731A2012-02-09
Attorney, Agent or Firm:
WATANABE, Kihei et al. (JP)
Kihei Watanabe (JP)
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