Title:
THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/061808
Kind Code:
A1
Abstract:
A thin film transistor (100) comprises a gate (10), a source (30), and a drain (50). The source and the drain are parallel disposed above the gate. The source comprises a first edge (32). The drain comprises a second edge (52). The first edge is disposed opposite to the second edge. A channel (70) is formed between the first edge and the second edge. The first edge and the second edge are nonlinear. The size of the channel in extension directions of the first edge and the second edge is the width of the channel; and in a width direction of the channel, the channel is gradually contracted and narrowed from the middle to the two ends. Accordingly, the light transmittances of parts of the channel of the thin film transistor can be consistent, and the quality of the thin film transistor is improved.
Inventors:
YI ZHIGUANG (CN)
Application Number:
PCT/CN2014/089425
Publication Date:
April 28, 2016
Filing Date:
October 24, 2014
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/08; H01L29/786
Foreign References:
| JPH10270699A | 1998-10-09 | |||
| CN1584718A | 2005-02-23 | |||
| US5612565A | 1997-03-18 |
Attorney, Agent or Firm:
GUANGZHOU SCIHEAD PATENT AGENT CO.. LTD (CN)
广州三环专利代理有限公司 (CN)
广州三环专利代理有限公司 (CN)
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