Title:
THREE DIMENSIONAL CROSS-POINT NON-VOLATILE MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/027623
Kind Code:
A1
Abstract:
A non-volatile memory having a 3D cross-point architecture and twice the cell density is provided in which vertically stacked word lines run in plane (i.e., parallel) to the substrate and bit lines runs perpendicular to the vertically stacked word lines. The vertically stacked word lines are located in a patterned dielectric material stack that includes alternating first dielectric material layers and recessed second dielectric material layers. The first dielectric material layers vertically separate each word line within each vertical stack of word lines and the recessed second dielectric material layers are located laterally adjacent to the word lines. A dielectric switching material layer is located between each word line-bit line combination. Some of the bit lines are located in the dielectric material stack and some of the bit lines are located in an interlayer dielectric material layer.
Inventors:
PARK CHANRO (US)
FROUGIER JULIEN (US)
XIE RUILONG (US)
CHENG KANGGUO (US)
FROUGIER JULIEN (US)
XIE RUILONG (US)
CHENG KANGGUO (US)
Application Number:
PCT/CN2023/110155
Publication Date:
February 08, 2024
Filing Date:
July 31, 2023
Export Citation:
Assignee:
INT BUSINESS MACHINES CORPORATION IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H10B63/00
Foreign References:
| US9911790B1 | 2018-03-06 | |||
| CN113540115A | 2021-10-22 | |||
| CN114267682A | 2022-04-01 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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