Title:
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/018456
Kind Code:
A3
Abstract:
A memory die includes an alternating stack of insulating layers and electrically conductive layers through which memory opening fill structures vertically extend. The memory die includes at least three memory array regions interlaced with at least two contact regions, or at least three contact regions interlaced with at least two memory array regions in the same memory plane. A logic die including at least two word line driver regions can be bonded to the memory die. The interlacing of the contact regions and the memory array regions can reduce lateral offset of boundaries of the word line driver regions from boundaries of the contact regions.
Inventors:
OGAWA HIROYUKI (US)
KAI JAMES (US)
MIZUTANI YUKI (US)
OTOI HISAKAZU (US)
HIGASHITANI MASAAKI (US)
TOYAMA FUMIAKI (US)
CHIBVONGODZE HARDWELL (US)
CUI ZHIXIN (US)
GAUTAM RAJDEEP (US)
KAI JAMES (US)
MIZUTANI YUKI (US)
OTOI HISAKAZU (US)
HIGASHITANI MASAAKI (US)
TOYAMA FUMIAKI (US)
CHIBVONGODZE HARDWELL (US)
CUI ZHIXIN (US)
GAUTAM RAJDEEP (US)
Application Number:
PCT/US2022/028266
Publication Date:
June 08, 2023
Filing Date:
May 09, 2022
Export Citation:
Assignee:
SANDISK TECHNOLOGIES LLC (US)
International Classes:
H10B43/27; H10B41/27; H10B41/35; H10B41/50; H10B43/35; H10B43/50
Foreign References:
| US20200161326A1 | 2020-05-21 | |||
| US11081443B1 | 2021-08-03 | |||
| US20200295028A1 | 2020-09-17 | |||
| US20210242128A1 | 2021-08-05 | |||
| US20190371728A1 | 2019-12-05 |
Attorney, Agent or Firm:
RADOMSKY, Leon et al. (US)
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