THREE-DIMENSIONAL MEMORY DEVICES HAVING TWO-DIMENSIONAL MATERIALS

Title:

THREE-DIMENSIONAL MEMORY DEVICES HAVING TWO-DIMENSIONAL MATERIALS

Document Type and Number:

WIPO Patent Application WO/2021/179197

Kind Code:

A1

Abstract:

Methods and structures of a three-dimensional memory device are disclosed. A 3D NAND memory structure includes a substrate and a vertical insulating layer. The 3D NAND memory structure also includes a channel layer surrounding the vertical insulating layer. The channel layer is formed of a two-dimensional material. The 3D NAND memory structure further includes a plurality of vertical dielectric layers surrounding the channel layer and an alternating conductor/dielectric stack in contact with the plurality of vertical dielectric layers.

Inventors:

TAN LIFANG (CN)
GAO FENG (CN)

Application Number:

PCT/CN2020/078722

Publication Date:

September 16, 2021

Filing Date:

March 11, 2020

Export Citation:

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

H01L27/11578; H01L27/11582

Foreign References:

CN108987408A	2018-12-11
CN108447870A	2018-08-24
CN109003985A	2018-12-14
CN110114878A	2019-08-09
US20140353738A1	2014-12-04

Attorney, Agent or Firm:

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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