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Title:
THREE-DIMENSIONAL MEMORY DEVICES HAVING TWO-DIMENSIONAL MATERIALS
Document Type and Number:
WIPO Patent Application WO/2021/179197
Kind Code:
A1
Abstract:
Methods and structures of a three-dimensional memory device are disclosed. A 3D NAND memory structure includes a substrate and a vertical insulating layer. The 3D NAND memory structure also includes a channel layer surrounding the vertical insulating layer. The channel layer is formed of a two-dimensional material. The 3D NAND memory structure further includes a plurality of vertical dielectric layers surrounding the channel layer and an alternating conductor/dielectric stack in contact with the plurality of vertical dielectric layers.

Inventors:
TAN LIFANG (CN)
GAO FENG (CN)
Application Number:
PCT/CN2020/078722
Publication Date:
September 16, 2021
Filing Date:
March 11, 2020
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11578; H01L27/11582
Foreign References:
CN108987408A2018-12-11
CN108447870A2018-08-24
CN109003985A2018-12-14
CN110114878A2019-08-09
US20140353738A12014-12-04
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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