Title:
THREE-DIMENSIONAL NON-VOLATILE FERROELECTRIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/056932
Kind Code:
A1
Abstract:
A three-dimensional non-volatile ferroelectric memory, comprising a ferroelectric memory array structure. The ferroelectric memory array structure comprises multiple stacked ferroelectric memory cell arrays, and each ferroelectric memory cell array comprises ferroelectric memory cells arranged in rows and columns, wherein basically orthogonal word lines and bits are correspondingly arranged opposite each other respectively at two sides of ferroelectric memory cells, and reference ferroelectrics are correspondingly arranged adjacent to the ferroelectric memory cells; the directions of polarization of the electric domains in the ferroelectric memory cells are not perpendicular to the direction of an electric field of a write voltage signal applied to the word lines and the bit lines; moreover, the write voltage signal is applied between the word lines and the bit lines, the electric domains in the ferroelectric memory cells are reversed and a domain wall conducting channel is established between the reference ferroelectrics adjacent thereto, wherein the domain wall conducting channel is electrically connected to the word lines and the bit lines at the two sides of the ferroelectric memory cells. The three-dimensional non-volatile ferroelectric memory has high density and low costs.
Inventors:
JIANG ANQUAN (CN)
CHAI XIAOJIE (CN)
ZHANG YAN (CN)
CHAI XIAOJIE (CN)
ZHANG YAN (CN)
Application Number:
PCT/CN2018/119974
Publication Date:
March 26, 2020
Filing Date:
December 10, 2018
Export Citation:
Assignee:
UNIV FUDAN (CN)
International Classes:
H01L27/11504
Foreign References:
| US20180005682A1 | 2018-01-04 | |||
| US20040114416A1 | 2004-06-17 | |||
| CN1574356A | 2005-02-02 | |||
| CN1892897A | 2007-01-10 | |||
| CN108520879A | 2018-09-11 |
Attorney, Agent or Firm:
CHINA PATENT AGENT (HK)LTD. (CN)
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