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Title:
THREE-DIMENSIONAL PHASE-CHANGE MEMORY DEVICES AND FORMING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/241660
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device includes a plurality of bit lines extending laterally, a common plate extending laterally, a plurality of word lines extending laterally and being disposed between the plurality of bit lines and the common plate, and a plurality of memory cells each disposed at an intersection of a respective one of the plurality of bit lines and a respective one of the plurality of word lines. Each of the plurality of memory cells includes a PCM structure between the respective word line and the common plate, and a selector extending vertically through the respective word line and being disposed between the PCM structure and the respective bit line.

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Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2021/094492
Publication Date:
November 24, 2022
Filing Date:
May 19, 2021
Export Citation:
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Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
H01L27/24; H01L45/00
Foreign References:
CN112470274A2021-03-09
CN102544049A2012-07-04
CN111129066A2020-05-08
CN111739904A2020-10-02
US20200395407A12020-12-17
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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