THREE-DIMENSIONAL PHASE-CHANGE MEMORY STRUCTURE, PREPARATION METHOD THEREFOR, PHASE-CHANGE MEMORY, AND ELECTRONIC DEVICE

WIPO Patent Application WO/2023/040385

A1

A three-dimensional phase-change memory structure, a preparation method therefor, a phase-change memory, and an electronic device. The three-dimensional phase-change memory structure comprises: a substrate (110), a stack structure (120) located on the substrate (110), first via holes (V1) running through the stack structure (120), X phase-change memory cells (130) located in the first via holes (V1), and transistors (140) and multiple wires located on the stack structure (120). When one of the phase-change memory cells (130) needs to be selected, all the transistors (140) are controlled to be turned on by means of a word line (WL), X phase-change memory cells (130) only electrically connected to a bit line (BL) are selected by means of the BL, and then one of the phase-change memory cells (130) is selected by means of a layer control line (PLx), so as to achieve unique selection of any phase-change memory cell (130), thereby achieving a novel three-dimensional phase-change memory structure (100). Moreover, in the three-dimensional phase-change memory structure (100), the X phase-change memory cells (130) located in a same via hole can share a same BL, and compared with the need for a BL for each layer of memory cells, the number of BLs can be significantly reduced, thereby reducing costs.

CHEN WEI (CN)
LAN TIAN (CN)
WU QUANTAN (CN)

PCT/CN2022/099171

March 23, 2023

June 16, 2022

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HUAWEI TECH CO LTD (CN)

H01L27/24; H01L45/00

JP2008181978A	2008-08-07
CN101847647A	2010-09-29
CN112635661A	2021-04-09
US20190267428A1	2019-08-29
JP2010165982A	2010-07-29

TDIP & PARTNERS (CN)

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