Title:
THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/232780
Kind Code:
A1
Abstract:
A three-dimensional resistive random access memory and a manufacturing method therefor. The three-dimensional resistive random access memory comprises: a plurality of layers of horizontal conductive electrodes (031, 032, 033) formed on a substrate (01), and isolating dielectric layers (041, 042) formed between layers of the horizontal conductive electrodes (031, 032, 033); and two resistance-variable storage layers (09), which run through the horizontal conductive electrodes (031, 032, 033) and the isolating dielectric layers (041, 042), and are vertical to the substrate (01), wherein inner sides of the two resistance-variable storage layers (09) are provided with vertical conductive electrodes (10) that are connected to the resistance-variable storage layers (09), side walls of the resistance-variable storage layers (09) and end parts of the horizontal conductive electrodes (031, 032, 033) are connected by means of gating material layers (08) that are arranged in the same layer as the horizontal conductive electrodes (031, 032, 033), and the gating material layers (08) are separated vertically by means of the isolating dielectric layers (041, 042). The three-dimensional resistive random access memory has a self-gating characteristic, can effectively improve storage density, is compatible with a CMOS process, and facilitates the popularization and application thereof.
More Like This:
Inventors:
ZUO QINGYUN (CN)
LI MING (CN)
LI MING (CN)
Application Number:
PCT/CN2020/138316
Publication Date:
November 25, 2021
Filing Date:
December 22, 2020
Export Citation:
Assignee:
SHANGHAI IC R & D CENTER CO LTD (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO (CN)
International Classes:
H01L27/24
Domestic Patent References:
| WO2017185326A1 | 2017-11-02 |
Foreign References:
| CN111564470A | 2020-08-21 | |||
| CN105826468A | 2016-08-03 | |||
| CN104485418A | 2015-04-01 |
Attorney, Agent or Firm:
SHANGHAI TIANCHEN INTELLECTUAL PROPERTY AGENCY (CN)
Download PDF:
Previous Patent: WAVELENGTH DIVISION MULTIPLEXING OPTICAL COMMUNICATION DEVICE
Next Patent: LIMITED PHASE CHANGE UNIT AND MANUFACTURING METHOD THEREFOR
Next Patent: LIMITED PHASE CHANGE UNIT AND MANUFACTURING METHOD THEREFOR