THROUGH ELECTRODE AND METHOD FOR PRODUCING MULTILAYER SUBSTRATE USING THROUGH ELECTRODE

Title:

THROUGH ELECTRODE AND METHOD FOR PRODUCING MULTILAYER SUBSTRATE USING THROUGH ELECTRODE

Document Type and Number:

WIPO Patent Application WO/2015/072422

Kind Code:

A1

Abstract:

The present invention relates to a through electrode which is provided on a substrate having a through hole. This through electrode is composed of: a through part that penetrates the through hole; a projected bump part that is formed at least at one end of the through part and has a wider width than the through electrode; and at least one metal film that is formed on a contact surface of the projected bump part, where the projected bump part is in contact with the substrate. The through part and the projected bump part are formed of a sintered body that is formed by sintering a powder of one or more metals selected from among gold, silver, palladium and platinum, said powder having a purity of 99.9% by weight or more and an average particle diameter of 0.005-1.0 μm. The metal film is formed of gold, silver, palladium or platinum having a purity of 99.9% by weight or more. This through electrode is useful for a circuit board having a multilayer structure and enables shortening of the wiring length of an element such as MEMS. In addition, this through electrode can be suited to hermetic sealing.

Inventors:

OGASHIWA TOSHINORI (JP)
MURAI HIROSHI (JP)
KANEHIRA YUKIO (JP)

Application Number:

PCT/JP2014/079710

Publication Date:

May 21, 2015

Filing Date:

November 10, 2014

Export Citation:

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Assignee:

TANAKA PRECIOUS METAL IND (JP)

International Classes:

H01L23/12; B81B7/00; B81C1/00; H01L23/14

Foreign References:

JP2009152496A	2009-07-09
JP2011071153A	2011-04-07
JP2001102756A	2001-04-13
JPH06350376A	1994-12-22
JP2005109515A	2005-04-21

Other References: