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Patent Searching and Data


Title:
THROUGH ELECTRODE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THROUGH ELECTRODE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/117111
Kind Code:
A1
Abstract:
This through electrode substrate comprises: a substrate which has a first surface and a second surface that is on the reverse side of the first surface; a plurality of through electrodes which penetrate the substrate; and a first capacitor which is arranged on the first surface of the substrate, and which is electrically connected to at least one of the plurality of through electrodes. The first capacitor comprises: a first conductive layer which is arranged on the first surface of the substrate, and which is electrically connected to the through electrode; an insulating layer which is arranged on the first conductive layer; and a second conductive layer which is arranged on the insulating layer. The insulating layer has: a first portion which is arranged between the first conductive layer and the second conductive layer; and a second portion which covers at least a part of the lateral surface of the first conductive layer.

Inventors:
TAKANO TAKAMASA (JP)
KURAMOCHI SATORU (JP)
Application Number:
PCT/JP2017/045575
Publication Date:
June 28, 2018
Filing Date:
December 19, 2017
Export Citation:
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Assignee:
DAINIPPON PRINTING CO LTD (JP)
International Classes:
H01L23/12; H05K1/11; H05K3/28
Foreign References:
JP2011155043A2011-08-11
JP2008227177A2008-09-25
JP2007300002A2007-11-15
JPS6382953U1988-05-31
JPH0832018A1996-02-02
JPH07272932A1995-10-20
JP2005159259A2005-06-16
JP2015095590A2015-05-18
JP2003152340A2003-05-23
JPH1051141A1998-02-20
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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