Title:
THROUGH-SILICON VIA FORMING PRODUCTION SYSTEM, THROUGH-SILICON VIA FORMING PRODUCTION METHOD, STORAGE MEDIUM, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2016/158576
Kind Code:
A1
Abstract:
The through-silicon via (TSV) forming production system according to the present invention includes: X-ray inspection devices (10, 11, 12) that acquire images showing the shape of a through-silicon via (70) formed in a silicon substrate and the state of a plating film in the through-silicon via; a defect pattern determining means (21) that determines the presence/absence of a void defect in the plating film on the basis of the acquired images, and classifies, when detecting the void defect, the void defect to one of a plurality of predetermined defect patterns; a failed treatment specifying means (22) that specifies a failed treatment which has caused the void defect, in accordance with the classified predetermined defect pattern; and a control means (23) that instructs a treatment device performing the failed treatment to perform a change treatment for correcting the failed treatment. The present invention can provide a through-silicon via forming production system that enables in-line non-destructive TSV inspection.
Inventors:
UMEHARA YASUTOSHI (JP)
NAMIOKA ICHIRO (JP)
NAMIOKA ICHIRO (JP)
Application Number:
PCT/JP2016/059030
Publication Date:
October 06, 2016
Filing Date:
March 22, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
G01N23/04; G01B15/00; G01B15/02; G01B15/04; G01N23/18; G05B19/418
Foreign References:
| JP2013231700A | 2013-11-14 | |||
| JP2015021784A | 2015-02-02 |
Other References:
ANDREW C. RUDACK: "Inspection and metrology for through-silicon vias and 3D integration", PROC. OF SPIE, METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVI, vol. 8324, 29 March 2012 (2012-03-29), pages 832403.1 - 832403.7, XP055319615, ISSN: 0277-786X
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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