Title:
Time Dependent Dielectric Breakdown Test Structure and Test Method Thereof
Document Type and Number:
WIPO Patent Application WO/2020/093238
Kind Code:
A1
Abstract:
A time dependent dielectric breakdown test structure (1, 3) includes a plurality of test units connected in parallel between a constant voltage and a ground. Each of the plurality of test units (10, 30) includes a dielectric test sample (Gn, Gp) connected to the constant voltage (V+, V-); and a current restraint unit connected between the dielectric test sample (Gn, Gp) and the ground, for restraining a breakdown current (In, Ip) from flowing on the dielectric test sample (Gn, Gp) after the constant voltage (V+, V-) has broken the dielectric test sample (Gn, Gp).
Inventors:
YANG SHENGWEI (CN)
HAN KUN (CN)
HAN KUN (CN)
Application Number:
PCT/CN2018/114143
Publication Date:
May 14, 2020
Filing Date:
November 06, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L21/66; G01R31/12
Foreign References:
| CN101702005A | 2010-05-05 | |||
| CN1387245A | 2002-12-25 | |||
| US20020033710A1 | 2002-03-21 | |||
| CN106291276A | 2017-01-04 | |||
| JP2001127126A | 2001-05-11 | |||
| CN101702005A | 2010-05-05 | |||
| CN206848417U | 2018-01-05 | |||
| CN204241624U | 2015-04-01 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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