Title:
TIN DISELENIDE-BASED THERMOELECTRIC MATERIAL AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2020/050466
Kind Code:
A1
Abstract:
The present invention relates to a SnSe2-based thermoelectric material and a method for producing same. More specifically the present invention relates to: a SnSe2-based thermoelectric material in which bromine (Br) is doped into the selenium (Se) sites of a compound containing tin (Sn) and selenium (Se) at a 1:2 ratio, and which not only exhibits low thermal conductivity through control of the lattice structure, but also ameliorates the electron-hole Seebeck coefficient cancellation effect to improve the Seebeck coefficient, and optimizes the current density to improve electric conductivity, thus exhibiting excellent thermoelectric performance; and a method for producing the a SnSe2-based thermoelectric material.
Inventors:
KIM TAE-WAN (KR)
MOON SEUNG-PIL (KR)
KIM SUNG-WOONG (KR)
LEE KYU-HYUNG (KR)
LEE KI-MOON (KR)
JEGARL SEONG (KR)
MOON SEUNG-PIL (KR)
KIM SUNG-WOONG (KR)
LEE KYU-HYUNG (KR)
LEE KI-MOON (KR)
JEGARL SEONG (KR)
Application Number:
PCT/KR2019/001835
Publication Date:
March 12, 2020
Filing Date:
February 14, 2019
Export Citation:
Assignee:
KOREA ELECTRIC POWER CORP (KR)
International Classes:
H01L35/14; H01L35/34
Foreign References:
| KR20160057789A | 2016-05-24 |
Other References:
WU, YIXUAN ET AL.: "Promising thermoelectric performance in van der Waals layered SnSe2", MATERIALS TODAY PHYSICS, vol. 3, 21 October 2017 (2017-10-21), pages 127 - 136, XP055689777
KIM, JIN T AE ET AL.: "Role of fluorine in two-dimensional dichalcogenide of SnSe2", SCIENTIFIC REPORTS, vol. 8, 26 January 2018 (2018-01-26), pages 1645, XP055689769
HUANG, YUCHENG ET AL.: "First-Principles Study on Doping of SnSe2 Monolayers", CHEMPHYSCHEM, vol. 17, 8 December 2015 (2015-12-08), pages 375 - 379, XP055689764
CHANG, CHENG ET AL.: "Raising thermoelectric performance of n-type SnSe via Br doping and Pb alloying", RSC ADVANCES, vol. 6, 10 October 2016 (2016-10-10), pages 98216, XP055689762
HYEON, DA SEUL ET AL.: "Electrical properties of bromine doped SnSe2 van der Waals material", JOURNAL OF PHYSICS D: APPLIED PHYSICS, vol. 51, 9 October 2018 (2018-10-09), pages 455102, XP020331958, DOI: 10.1088/1361-6463/aae257
KIM, JIN T AE ET AL.: "Role of fluorine in two-dimensional dichalcogenide of SnSe2", SCIENTIFIC REPORTS, vol. 8, 26 January 2018 (2018-01-26), pages 1645, XP055689769
HUANG, YUCHENG ET AL.: "First-Principles Study on Doping of SnSe2 Monolayers", CHEMPHYSCHEM, vol. 17, 8 December 2015 (2015-12-08), pages 375 - 379, XP055689764
CHANG, CHENG ET AL.: "Raising thermoelectric performance of n-type SnSe via Br doping and Pb alloying", RSC ADVANCES, vol. 6, 10 October 2016 (2016-10-10), pages 98216, XP055689762
HYEON, DA SEUL ET AL.: "Electrical properties of bromine doped SnSe2 van der Waals material", JOURNAL OF PHYSICS D: APPLIED PHYSICS, vol. 51, 9 October 2018 (2018-10-09), pages 455102, XP020331958, DOI: 10.1088/1361-6463/aae257
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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