Title:
TOP GATE SELF-ALIGNMENT METAL OXIDE SEMICONDUCTOR TFT AND MANUFACTURING METHOD THEREFOR AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2020/206707
Kind Code:
A1
Abstract:
A top gate self-alignment metal oxide semiconductor TFT and a manufacturing method therefor, and a display panel. The top gate self-alignment metal oxide semiconductor TFT is additionally added with an ultra-thin metal layer to prevent indium gallium zinc oxide from being damaged by plasma during chemical vapor deposition of a gate 207, and meanwhile to improve the mobility and reliability of a device.
Inventors:
YU MING-JIUE (CN)
Application Number:
PCT/CN2019/082980
Publication Date:
October 15, 2020
Filing Date:
April 17, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/77
Foreign References:
| CN107195641A | 2017-09-22 | |||
| CN107195641A | 2017-09-22 | |||
| CN107799570A | 2018-03-13 | |||
| CN106876476A | 2017-06-20 | |||
| CN105633016A | 2016-06-01 | |||
| US20110316830A1 | 2011-12-29 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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