Title:
TRANSISTOR BASED ON TWO-DIMENSIONAL MATERIAL AND PREPARATION METHOD THEREFOR, AND TRANSISTOR ARRAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/195761
Kind Code:
A1
Abstract:
Provided is a transistor based on a two-dimensional material, comprising an insulating substrate (10), and a source electrode (11) and a drain electrode (12) being provided at two ends of the insulating substrate (10), wherein a channel (13) is provided between the source electrode (11) and the drain electrode (12), and the middle part of the channel (13) is provided with a first two-dimensional material layer (131); a second two-dimensional material layer (132) in a channel area provided on one side of the first two-dimensional material layer (131) and connected to the source electrode (11), and a third two-dimensional material layer (133) in a channel area provided at the other side of the first two-dimensional material layer (131) and connected to the drain electrode (12), wherein the three two-dimensional material layers are an integral film layer of the same material; and a gate dielectric layer (14) and a grid electrode (15) provided on the first two-dimensional material layer (131). The thickness of the second two-dimensional material layer (132) and the thickness of the third two-dimensional material layer (133) are both greater than the thickness of the first two-dimensional material layer (131). In the transistor structure, the second and third two-dimensional material layers in contact with the source and drain electrodes are thicker, so that the contact resistance can be reduced, whereas the first two-dimensional material layer in the middle part of the channel is thinner than the contact areas, thereby ensuring a high migration rate and the modulation of the gate on the channel at the same time. Further provided are a preparation method for a transistor based on a two-dimensional material and an application thereof.
Inventors:
ZHAO CHONG (CN)
XU HUILONG (CN)
ZHANG CHENXIONG (CN)
XU HUILONG (CN)
ZHANG CHENXIONG (CN)
Application Number:
PCT/CN2017/081821
Publication Date:
November 01, 2018
Filing Date:
April 25, 2017
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/02; H01L21/77
Domestic Patent References:
| WO2016200971A1 | 2016-12-15 |
Foreign References:
| CN203674269U | 2014-06-25 | |||
| CN106057880A | 2016-10-26 | |||
| CN106206683A | 2016-12-07 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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