TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2023/197256

A1

Disclosed are a transistor device and a method for manufacturing same. The transistor device comprises a gate, a gate insulator, and a body area and a drift area stacked in a first direction. The gate comprises a top surface and a bottom surface opposite to each other, and side surfaces between the top surface and the bottom surface; the bottom surface is in the first direction of the top surface; the gate insulator surrounds the bottom surface and at least part of the side surfaces of the gate; the gate insulator comprises a side wall and a bottom; the body area surrounds part of the side wall of the gate insulator; and the gate insulator extends in the first direction into the drift area from the surface of the drift area facing the body area. The body area comprises a first sub-area, a second sub-area, and a third sub-area which are sequentially arranged in a second direction, the second direction being perpendicular to the first direction and pointing to a direction distant from the gate insulator, wherein the average charge carrier concentration of the first sub-area and the average charge carrier concentration of the third sub-area are both greater than the average charge carrier concentration of the second sub-area.

QI JINWEI (CN)
ZHANG YAOHUI (CN)

PCT/CN2022/086861

October 19, 2023

April 14, 2022

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SUZHOU LOONGSPEED SEMICONDUCTOR TECH CO LTD (CN)

H01L29/06; H01L29/78

CN109417090A	2019-03-01
CN102208414A	2011-10-05
US20140231867A1	2014-08-21
CN109065628A	2018-12-21

CHINA PATENT AGENT (H.K.) LTD. (CN)

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