Title:
TRANSISTOR DEVICE, TERNARY INVERTER DEVICE INCLUDING SAME, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/141756
Kind Code:
A1
Abstract:
A transistor device comprises: a substrate; a source area provided at the upper part of the substrate; a drain area spaced apart from the source area in the substrate in a direction parallel to the upper surface of the substrate; a gate electrode provided on the substrate and between the source area and the drain area; a gate insulating film interposed between the gate electrode and the substrate; and a constant current forming layer extending between the source area and the drain area in the direction parallel to the upper surface of the substrate, wherein the constant current forming layer forms a constant current between the drain area and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
Inventors:
KIM KYUNG ROK (KR)
JEONG JAE WON (KR)
CHOI YOUNG EUN (KR)
KIM WOO SEOK (KR)
JEONG JAE WON (KR)
CHOI YOUNG EUN (KR)
KIM WOO SEOK (KR)
Application Number:
PCT/KR2019/017782
Publication Date:
July 09, 2020
Filing Date:
December 16, 2019
Export Citation:
Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
International Classes:
H01L21/8238; H01L21/265; H01L27/092; H01L29/10
Foreign References:
| JP6060718B2 | 2017-01-18 | |||
| JP3886716B2 | 2007-02-28 | |||
| KR20160088074A | 2016-07-25 | |||
| KR20170082179A | 2017-07-14 | |||
| KR20180111690A | 2018-10-11 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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