Title:
TRANSISTOR DRIVEN 3D MEMORY
Document Type and Number:
WIPO Patent Application WO/2012/068127
Kind Code:
A3
Abstract:
A nonvolatile memory device with a first conductor extending in a first direction and a semiconductor element above the first conductor. The semiconductor element includes a source, a drain and a channel of a field effect transistor (JFET or MOSFET). The nonvolatile memory device also includes a second conductor above the semiconductor element, the second conductor extending in a second direction. The nonvolatile memory device also includes a resistivity switching material disposed between the first conductor and the semiconductor element or between the second conductor and the semiconductor element. The JFET or MOSFET includes a gate adjacent to the channel, and the MOSFET gate being self-aligned with the first conductor.
Inventors:
MIHNEA ANDREI (US)
SAMACHISA GEORGE (US)
SAMACHISA GEORGE (US)
Application Number:
PCT/US2011/060812
Publication Date:
July 26, 2012
Filing Date:
November 15, 2011
Export Citation:
Assignee:
SANDISK 3D LLC (US)
MIHNEA ANDREI (US)
SAMACHISA GEORGE (US)
MIHNEA ANDREI (US)
SAMACHISA GEORGE (US)
International Classes:
G11C13/00; H01L45/00
Domestic Patent References:
| WO2007008902A2 | 2007-01-18 |
Foreign References:
| US20080121860A1 | 2008-05-29 | |||
| US20090001337A1 | 2009-01-01 | |||
| US20050063220A1 | 2005-03-24 |
Attorney, Agent or Firm:
RADOMSKY, Leon et al. (PLLC11800 Sunrise Valley Drive,15th Floo, Reston VA, US)
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