Title:
TRANSISTOR AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/125795
Kind Code:
A1
Abstract:
Provided is a transistor which is low in noise. Also provided is an imaging device which comprises a transistor that is low in noise. A transistor which is characterized by comprising a first oxide semiconductor, a second oxide semiconductor, a third oxide semiconductor, a gate insulating film and a gate electrode, and which is further characterized in that: the second oxide semiconductor is arranged between the first oxide semiconductor and the third oxide semiconductor; the first oxide semiconductor contains In, Zn and Ga at or around the composition ratio of In:Ga:Zn = 1:3:4 (atomic ratio); the second oxide semiconductor contains In, Zn and Ga at or around the composition ratio of In:Ga:Zn = 4:2:4.1 (atomic ratio); the third oxide semiconductor contains In, Zn and Ga at or around the composition ratio of In:Ga:Zn = 1:3:2 (atomic ratio); and the second oxide semiconductor has a crystal structure.
Inventors:
YAMAZAKI SHUNPEI (JP)
TSUBUKU MASASHI (JP)
KATAISHI RIHO (JP)
HIROSE ATSUSHI (JP)
TSUBUKU MASASHI (JP)
KATAISHI RIHO (JP)
HIROSE ATSUSHI (JP)
Application Number:
PCT/IB2016/052924
Publication Date:
July 27, 2017
Filing Date:
May 19, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L27/146; H04N5/357; H04N5/374
Foreign References:
| US20150243738A1 | 2015-08-27 | |||
| US20160013321A1 | 2016-01-14 | |||
| JP2015195378A | 2015-11-05 | |||
| JP2014116594A | 2014-06-26 |
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