Title:
TRANSISTOR AND TRANSISTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/226453
Kind Code:
A1
Abstract:
A transistor and a transistor manufacturing method are disclosed. The transistor manufacturing method comprises the steps of: forming an epitaxial layer and a dielectric layer on a substrate; forming a first resist pattern on the dielectric layer; on the basis of the first resist pattern, etching the dielectric layer and resist-stripping a first resist; on the basis of the etched dielectric layer, forming a regrowth region by etching a cap layer, and growing regrowth material on the regrowth region that has been formed; forming a second resist pattern on the cap layer where the regrowth material is present; etching a region of the cap layer on the basis of the second resist pattern that has been formed; and depositing a gate on the region that has been formed by etching.
Inventors:
KIM DAE HYUN (KR)
BAEK JI MIN (KR)
YUN DO YOUNG (KR)
JO HYEON BHIN (KR)
LEE IN GEUN (KR)
BAEK JI MIN (KR)
YUN DO YOUNG (KR)
JO HYEON BHIN (KR)
LEE IN GEUN (KR)
Application Number:
PCT/KR2020/006093
Publication Date:
November 12, 2020
Filing Date:
May 08, 2020
Export Citation:
Assignee:
KYUNGPOOK NAT UNIV IND ACADEMIC COOP FOUND (KR)
International Classes:
H01L29/66; H01L21/033; H01L21/28; H01L29/08; H01L29/20; H01L29/417; H01L29/423; H01L29/778
Foreign References:
| KR100324208B1 | 2002-02-16 | |||
| KR100243648B1 | 2000-03-02 | |||
| KR20140010479A | 2014-01-27 | |||
| US20150236109A1 | 2015-08-20 | |||
| US20050093021A1 | 2005-05-05 | |||
| KR102050012B1 | 2019-11-28 |
Attorney, Agent or Firm:
KIM, Tae-hun (KR)
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