Title:
TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/087353
Kind Code:
A1
Abstract:
Provided in the present application is a method for manufacturing a transistor. The method comprises: providing a substrate, a solution, an active layer material and an auxiliary electrode, wherein the active layer material is dispersed in the solution, and the active layer material is electrified; placing the auxiliary electrode on one side of the substrate; placing the solution between the auxiliary electrode and a gate insulating layer; and electrifying a gate electrode and the auxiliary electrode, wherein the electrical property of the gate electrode is the opposite of the electrical property of the active layer material, and the active layer material is deposited on the gate insulating layer under the action of an electric field, so as to form an active layer.
Inventors:
CHEN LIXUAN (CN)
CAO WEIRAN (CN)
CAO WEIRAN (CN)
Application Number:
PCT/CN2021/133039
Publication Date:
May 25, 2023
Filing Date:
November 25, 2021
Export Citation:
Assignee:
HUIZHOU CHINA STAR OPTOELECTRONICS DISPLAY CO LTD (CN)
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/822; H01L27/04
Foreign References:
| CN105514039A | 2016-04-20 | |||
| CN107903712A | 2018-04-13 | |||
| CN102206225A | 2011-10-05 | |||
| CN111490093A | 2020-08-04 | |||
| US20070114525A1 | 2007-05-24 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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