Title:
TRANSISTOR AND PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/197828
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and provides a transistor and a preparation method therefor, and a semiconductor device and a preparation method therefor, for use in ameliorating the problem that the thickness of each film layer in a gate structure of a transistor is limited due to a decrease in size of a semiconductor device. The transistor comprises a fin, a gate dielectric layer, a gate metal layer, a source, and a drain. The fin comprises a source region, a drain region, and a channel region located between the source region and the drain region. The gate dielectric layer is arranged across the channel region. The gate dielectric layer contains aluminum atoms, and the aluminum atoms are close to the surface of the gate dielectric layer away from the channel region. The gate metal layer is located on the gate dielectric layer. The source is located on the source region, and the drain is located on the drain region. The transistor is applied to a semiconductor device to improve the performance of the semiconductor device.
Inventors:
ZHANG KEHAO (CN)
HUANG WEICHUAN (CN)
LIU XI (CN)
LIU XU (CN)
CHEN LEI (CN)
YE JOHN (CN)
LIN JUN (CN)
HUANG WEICHUAN (CN)
LIU XI (CN)
LIU XU (CN)
CHEN LEI (CN)
YE JOHN (CN)
LIN JUN (CN)
Application Number:
PCT/CN2023/082328
Publication Date:
October 19, 2023
Filing Date:
March 17, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L21/8238; H01L27/092; H01L29/51
Foreign References:
| CN112103341A | 2020-12-18 | |||
| CN104103502A | 2014-10-15 | |||
| CN102339858A | 2012-02-01 | |||
| US20150129973A1 | 2015-05-14 | |||
| CN113314523A | 2021-08-27 | |||
| US20080128822A1 | 2008-06-05 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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