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Patent Searching and Data


Title:
TRANSISTOR PRODUCTION METHOD AND TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/026394
Kind Code:
A1
Abstract:
The invention is a production method for a transistor 1 that comprises a substrate 10, a gate electrode 12, a source electrode 14, a drain electrode 16, and a semiconductor layer 18, and includes a semiconductor layer forming step of irradiating and sputtering helicon plasma onto a raw material that is to constitute the semiconductor layer 18, thereby causing the semiconductor layer 18 to be formed.

Inventors:
NAKAZUMI Makoto (15-3 Konan 2-chome, Minato-k, Tokyo 90, 〒1086290, JP)
NISHI Yasutaka (15-3 Konan 2-chome, Minato-k, Tokyo 90, 〒1086290, JP)
Application Number:
JP2018/019626
Publication Date:
February 07, 2019
Filing Date:
May 22, 2018
Export Citation:
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Assignee:
NIKON CORPORATION (15-3, Konan 2-chome Minato-k, Tokyo 90, 〒1086290, JP)
International Classes:
H01L21/336; H01L21/203; H01L29/786
Domestic Patent References:
WO2017094547A12017-06-08
WO2015029264A12015-03-05
Foreign References:
JP2015029038A2015-02-12
JP2013004849A2013-01-07
JP2012124446A2012-06-28
Attorney, Agent or Firm:
SHOYO INTELLECTUAL PROPERTY FIRM (6F Tobu Yokohama 2ND Bldg, 15-1 Kitasaiwai 2-chome, Nishi-ku, Yokohama-sh, Kanagawa 04, 〒2200004, JP)
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