Title:
TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/002757
Kind Code:
A1
Abstract:
Provided is a novel transistor. This transistor is provided with a gate electrode, a first and a second conductor, a gate insulator, and first to third metal oxides. The gate insulator is positioned between the gate electrode and the first metal oxide. The gate electrode has a region which overlaps with the second metal oxide, with the gate insulator and the first metal oxide therebetween. The first conductor and the second conductor each have a region that touches the top surface and a side surface of the second metal oxide. The second metal oxide has a laminated structure in which metal oxides respectively having a first or a second band gap are alternately layered, and is provided with at least two layers of the metal oxide having the first band gap. The energy at the bottom of the conduction band of the metal oxide having the first band gap is lower than the energy at the bottom of the conduction band of the metal oxide having the second band gap. The energy at the bottom of the conduction band of the third metal oxide is higher than the energy at the bottom of the conduction band of the metal oxide having the first band gap.
Inventors:
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2017/053552
Publication Date:
January 04, 2018
Filing Date:
June 15, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108
Domestic Patent References:
| WO2016092427A1 | 2016-06-16 | |||
| WO2011039853A1 | 2011-04-07 |
Foreign References:
| JP2016027652A | 2016-02-18 | |||
| JP2014057049A | 2014-03-27 | |||
| JP2012023352A | 2012-02-02 |
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