Title:
TRANSITION METAL COMPOUND, PREPARATION METHOD THEREFOR, AND COMPOSITION FOR DEPOSITING TRANSITION METAL-CONTAINING THIN FILM, CONTAINING SAME
Document Type and Number:
WIPO Patent Application WO/2017/179857
Kind Code:
A1
Abstract:
The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
Inventors:
KIM MYONG WOON (KR)
LEE SANG ICK (KR)
CHAE WON MOOK (KR)
YIM SANG JUN (KR)
LEE KANG YONG (KR)
CHO A RA (KR)
JEON SANG YONG (KR)
LIM HAENG DON (KR)
LEE SANG ICK (KR)
CHAE WON MOOK (KR)
YIM SANG JUN (KR)
LEE KANG YONG (KR)
CHO A RA (KR)
JEON SANG YONG (KR)
LIM HAENG DON (KR)
Application Number:
PCT/KR2017/003782
Publication Date:
October 19, 2017
Filing Date:
April 06, 2017
Export Citation:
Assignee:
DNF CO LTD (KR)
International Classes:
C07F7/10; C23C16/18; C23C16/40
Foreign References:
| KR20120078025A | 2012-07-10 | |||
| KR20070121281A | 2007-12-27 | |||
| US6635778B1 | 2003-10-21 | |||
| KR20120042971A | 2012-05-03 |
Other References:
VALADE, L. ET AL.: "Evaluation of the Simultaneous Use of Cp2VMe2 and CpTiC12N (SiMe3)2 as Precursors to Ceramic: Thin Films Containing Titanium and Vanadium: towards Titanium-vanadium Carbonitride", APPLIED ORGANOMETALLIC CHEMISTRY, vol. 12, 1998, pages 173 - 187, XP055433915
Attorney, Agent or Firm:
PLUS INTERNATIONAL IP LAW FIRM (KR)
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