Title:
TRANSMISSION LINE
Document Type and Number:
WIPO Patent Application WO/1998/007206
Kind Code:
A1
Abstract:
The present invention pertains to the field of electronics and micro-electronics and more precisely relates to transmission lines. This invention may be used in the production of transmission lines having variable characteristic impedance and length. Modulators and switches may also be integrated into the transmission line of the present invention. This invention may be used to control the number of loads connected to the transmission line using the external electrical voltage as well as to connect the loads required to said transmission line and to modulate the value of a load connected to the transmission line using the control voltage. The transmission line of the present invention includes several dual-conductor transmission lines among which one conductor (2) is a main conductor. The other conductors (11), including those with different lengths, are either connected to conductive parts (1) or spaced by a gap from said conductive parts (1). The transmission lines form an ohmic contact towards a semi-conductive layer (4) having an electronic or hole-type conductivity with a pre-formed non-rectifying contact. The conductive parts (1) may be formed at the beginning or at the end of the transmission line or, alternatively, at the beginning and at the end of said transmission line. A semi-conductive and/or metallic layer is formed with another non-rectifying contact at the surface of the layer (4), wherein this new layer forms together with the film a p-n junction and/or a Schottky barrier having a non-homogenous doping profile in a direction transverse to the parts (1). When the conductors (11) are spaced by a gap from the conductive parts (1), another semi-conductive layer (12) is formed with a pre-formed non-rectifying contact above said gap, wherein said layer has an electronic or hole-type conductivity. A p-n junction and/or a Schottky barrier having a non-homogenous doping profile in a direction transverse to the parts (1) is formed at the surface of said layer with the other non-rectifying contact. The characteristic impedance and the length of the transmission line are selected according to the voltage values at the p-n junctions and/or Schottky barriers.
Inventors:
IOFFE VALERY MOISEEVICH (RU)
MAKSUTOV ASKHAT IBRAGIMOVICH (RU)
MAKSUTOV ASKHAT IBRAGIMOVICH (RU)
Application Number:
PCT/RU1997/000213
Publication Date:
February 19, 1998
Filing Date:
July 07, 1997
Export Citation:
Assignee:
IOFFE VALERY MOISEEVICH (RU)
MAKSUTOV ASKHAT IBRAGIMOVICH (RU)
MAKSUTOV ASKHAT IBRAGIMOVICH (RU)
International Classes:
H01P1/213; H01P3/08; (IPC1-7): H01P3/08; H01P1/15; H01P9/00
Foreign References:
| SU902122A1 | 1982-01-30 | |||
| US3445793A | 1969-05-20 | |||
| US4229717A | 1980-10-21 | |||
| US4348651A | 1982-09-07 | |||
| EP0383193A2 | 1990-08-22 |
Attorney, Agent or Firm:
FIRM 'PATENT SERVICES CENTRE' (16-16 Novosibirsk, 4, RU)
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