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Title:
TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2013/183564
Kind Code:
A1
Abstract:
Provided is a transparent conductive film having high transmissibity and low specific resistance. The transparent conductive film (1) according to the present embodiment comprises a film base (2) and a polycrystalline layer (3) formed on the film base and comprising an indium tin oxide. The polycrystalline layer (3) has a thickness of 10 to 30 nm, an average crystal particle diameter of 180 to 270 nm, and a carrier density of more than 6 × 1020 /cm3 and up to 9 × 1020 /cm3.

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Inventors:
KAJIHARA DAISUKE (JP)
NASHIKI TOMOTAKE (JP)
HAISHI MOTOKI (JP)
Application Number:
PCT/JP2013/065231
Publication Date:
December 12, 2013
Filing Date:
May 31, 2013
Export Citation:
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Assignee:
NITTO DENKO CORP (JP)
International Classes:
H01B5/14; B32B9/00; C23C14/08; C23C14/34
Domestic Patent References:
WO2013111681A12013-08-01
Foreign References:
JP2006202756A2006-08-03
JPH07278791A1995-10-24
JP2001152323A2001-06-05
JPH0877845A1996-03-22
JP2002041243A2002-02-08
JPH0315536B21991-03-01
JP2013152827A2013-08-08
Other References:
HIROSHI KIMURA ET AL.: "DC magnetron sputtered ITO films applied with indium tin oxide targets", JOURNAL OF THE VACUUM SOCIETY OF JAPAN, vol. 30, no. 6, 20 June 1987 (1987-06-20), pages 546 - 554
Attorney, Agent or Firm:
EINSEL Felix-Reinhard et al. (JP)
アインゼル Felix-Reinhardt (JP)
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