Title:
TRANSPARENT CONDUCTIVE LAYER, TARGET FOR TRANSPARENT CONDUCTIVE LAYER AND A PROCESS FOR PRODUCING THE TARGET FOR TRANSPARENT CONDUCTIVE LAYER
Document Type and Number:
WIPO Patent Application WO/2011/152682
Kind Code:
A2
Abstract:
The present invention relates to a transparent conductive layer, which comprises, based on a total weight of the transparent conductive layer, 0.01 ~ 10 wt% of an additive comprising a compound having at least one or two selected from the group that consists of tantalum, niobium and vanadium; and 90 ~ 99.99 wt% of an indium tin oxide (ITO).
Inventors:
PARK, Chang-Woo (202-204, Daedeok Techno Valley 2-Cha Purgio 2 Danji Apt. 725, Yongsan-dong, Yuseong-gu, Daejeon 305-500, 305-500, KR)
박장우 (대전광역시 유성구 용산동 725 대덕테크노밸리 2차 푸르지오 2단지 아파트 202동 204호, 305-500 Daejeon, 305-500, KR)
박장우 (대전광역시 유성구 용산동 725 대덕테크노밸리 2차 푸르지오 2단지 아파트 202동 204호, 305-500 Daejeon, 305-500, KR)
Application Number:
KR2011/004081
Publication Date:
December 08, 2011
Filing Date:
June 03, 2011
Export Citation:
Assignee:
ADVANCED NANO PRODUCTS CO., LTD. (244 Buyong Industrial Complex, Kumho-ri Buyong-myeon, Chungwon-kun, Chungcheongbuk-do 363-942, 363-942, KR)
주식회사 나노신소재 (충청북도 청원군 부용면 금호리 244 부용지방산업단지 내, 363-942 Chungcheongbuk-do, 363-942, KR)
PARK, Chang-Woo (202-204, Daedeok Techno Valley 2-Cha Purgio 2 Danji Apt. 725, Yongsan-dong, Yuseong-gu, Daejeon 305-500, 305-500, KR)
주식회사 나노신소재 (충청북도 청원군 부용면 금호리 244 부용지방산업단지 내, 363-942 Chungcheongbuk-do, 363-942, KR)
PARK, Chang-Woo (202-204, Daedeok Techno Valley 2-Cha Purgio 2 Danji Apt. 725, Yongsan-dong, Yuseong-gu, Daejeon 305-500, 305-500, KR)
International Classes:
H01B1/02; H01B1/08; H01B5/14
Attorney, Agent or Firm:
HANYANG PATENT FIRM (Hanyang Building, 412-1 Dogok-dong Gangnam-gu, Seoul 135-854, 135-854, KR)
Claims: