Title:
TRENCH-GATE SIC MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/049801
Kind Code:
A1
Abstract:
The present invention relates to a trench-gate SiC MOSFET device and a manufacturing method therefor. The trench-gate SiC MOSFET device of the present invention comprises: a gate oxide film covering a gate trench formed in a SiC substrate (e.g., an n-type 4H-SiC substrate); a doped well (e.g., BPW) formed under the gate oxide film in the gate trench area; a gate electrode formed in the gate trench covered by the gate oxide film; an interlayer insulating film formed on the gate electrode; a source electrode covering the top surface of a doping layer for a source area formed on the entire surface of an epitaxial layer of the substrate and the top surface of the interlayer insulating film; and a drain electrode formed on the rear surface of the substrate.
Inventors:
MOON JEONG HYUN (KR)
KANG IN-HO (KR)
KIM SANG CHEOL (KR)
KIM HYOUNG WOO (KR)
NA MOONKYONG (KR)
BAHNG WOOK (KR)
SEOK OGYUN (KR)
KANG IN-HO (KR)
KIM SANG CHEOL (KR)
KIM HYOUNG WOO (KR)
NA MOONKYONG (KR)
BAHNG WOOK (KR)
SEOK OGYUN (KR)
Application Number:
PCT/KR2020/011654
Publication Date:
March 18, 2021
Filing Date:
August 31, 2020
Export Citation:
Assignee:
KERI KOREA ELECTROTECHNOLOGY RES INST (KR)
International Classes:
H01L29/423; H01L21/02; H01L21/265; H01L21/324; H01L21/8234; H01L29/16; H01L29/66; H01L29/78
Foreign References:
| US20180097069A1 | 2018-04-05 | |||
| JP2012199382A | 2012-10-18 | |||
| KR100430322B1 | 2004-12-04 | |||
| KR20140091956A | 2014-07-23 | |||
| KR20170086561A | 2017-07-26 |
Attorney, Agent or Firm:
HMP IP GROUP (KR)
Download PDF: