Title:
TRENCH MOS SCHOTTKY DIODE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/167873
Kind Code:
A1
Abstract:
Provided is a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 that is formed from a Ga2O3 single crystal; a second semiconductor layer 11 that is formed from a Ga2O3 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 μm or less, in a region that includes the inner surface of the trench 12.
Inventors:
SASAKI KOHEI (JP)
FUJITA MINORU (JP)
HIRABAYASHI JUN (JP)
ARIMA JUN (JP)
FUJITA MINORU (JP)
HIRABAYASHI JUN (JP)
ARIMA JUN (JP)
Application Number:
PCT/JP2019/007029
Publication Date:
September 06, 2019
Filing Date:
February 25, 2019
Export Citation:
Assignee:
TAMURA SEISAKUSHO KK (JP)
NOVEL CRYSTAL TECH INC (JP)
TDK CORP (JP)
NOVEL CRYSTAL TECH INC (JP)
TDK CORP (JP)
International Classes:
H01L29/872; C30B29/16; C30B33/08; H01L21/329; H01L29/41; H01L29/47; H01L29/861; H01L29/868; H01L29/94
Domestic Patent References:
| WO2017188105A1 | 2017-11-02 | |||
| WO2017188105A1 | 2017-11-02 |
Foreign References:
| JP2016039194A | 2016-03-22 | |||
| JP2016025256A | 2016-02-08 | |||
| JP2010192555A | 2010-09-02 |
Other References:
See also references of EP 3761374A4
Attorney, Agent or Firm:
HIRATA & PARTNERS (JP)
Download PDF:
Previous Patent: RESIN COMPOSITION
Next Patent: MONOCLONAL ANTIBODY AGAINST APOA4, IMMUNOASSAY METHOD, AND KIT FOR MEASUREMENT
Next Patent: MONOCLONAL ANTIBODY AGAINST APOA4, IMMUNOASSAY METHOD, AND KIT FOR MEASUREMENT